Customization: | Available |
---|---|
LED Packaging Type: | Chip |
Chip Material: | InGaN |
Still deciding? Get samples of $ !
Request Sample
|
Suppliers with verified business licenses
Audited by an independent third-party inspection agency
Part No. |
Chip | Lens Color |
Material | ||
LLS1206IR840 | Silicon | Black |
Parameter | Symbol | Value | Unit |
Collector-Emitter Voltage | Vceo | 30 | V |
Emitter-Collector-Voltage | Veco | 5 | V |
Collector Current | Ic | 20 | mA |
Operating Temperature | Topr | -25 ~+85 | ºC |
Storage Temperature | Tstg | -40 ~+100 | ºC |
Soldering Temperature *1 | Tsol | 260 | ºC |
Power Dissipation at(or below) 250Free Air Temperature |
Pd | 75 | mW |
Parameter | Symbol | Condition | Min | Typ | Max | Unit |
Rang Of Spectral Bandwidth | λ0.1 | --- |
730 | --- | 1100 | nm |
Wavelength Of Peak Sensitivity | λp | --- | --- | 840 | --- | nm |
Collector-Emitter Breakdown Voltage |
BVCEO | IC=500μA Ee=0mW/cm2 | 30 |
--- |
--- |
V |
Emitter-Collector Breakdown Voltage |
BVECO | IE=50μA Ee=0mW/cm2 | 5 |
--- |
--- |
V |
Collector-Emitter Saturation Voltage |
VCE(sat) | IC=5mA Ee=1m W/cm2 |
--- |
--- |
0.4 |
V |
Collector Dark Current | ICEO | VCE=20V Ee=0mW/cm2 | --- |
--- |
50 |
nA |
On State Collector Current | IC(ON) | VCE=5V Ee=1mW/cm2 |
--- |
1.0 |
--- |
mA |
Rise Time | tr | VCE=5V IC=1mA RL=1000Ω |
--- | 20 | --- | μS |
Fall Time | tf |
--- | 20 | --- |