Customization: | Available |
---|---|
LED Packaging Type: | Chip |
Chip Material: | InGaN |
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Parameter | Symbol | Value | Unit |
Power dissipation | Pd | 315 | mW |
Forward current | If | 100 | mA |
Reverse voltage | Vr | 5 | V |
Operating temperature range | Top | -40 ~+100 | ºC |
Storage temperature range | Tstg | -40 ~+100 | ºC |
Peak pulsing current | Ifp | 100 | mA |
Electrostatic Discharge | ESD | 2000(HBM) | V |
Parameters | Test Condition |
Symbol | Value | Unit | ||
Min. | Typ. | Max. | ||||
Wavelength at peak emission |
If=100mA | Λ peak | 850 | -- | 855 | nm |
Spectral Radiation bandwidth | If=100mA | △ λ | -- | 12 | -- | nm |
Forward voltage | If=100mA | Vf | 1.4 | -- | 1.6 | v |
Dominant wavelength | If=100mA | λd | -- | -- | -- | nm |
Luminous intensity | If=100mA | po | 40 | -- | 45 | mw |
Viewing angle at 50% Iv | If=100mA | 2 θ 1/2 | 120 | Deg | ||
Reverse current | Vr=5V | Ir | 10 | μA |