| LED Packaging Type: | Chip |
|---|---|
| Chip Material: | GaN |
| Beam Angle: | Non |
| Emitting Color: | S-Band |
| Base Material: | Ceramic and Silicone Package |
| Power: | 420W |
| Customization: |
|---|
Suppliers with verified business licenses
Audited Supplier 3.1-3.5 GHz GaN Internally-matched Power Transistor
This GaN-HEMT offers high power, high efficiency and greater consistency for S-band radar applications in 50Ω (Zin/Zout=50Ω) operating system.
Features
Broad Band: 3.1 GHz to 3.5 GHz
Power Gain(dB): ≥14dB
Pout(dBm): ≥ 55.0dBm
Efficiency(%): ≥ 55.0%(Typ.)
Packaging: QF136HP
Impedance Matched Zin/Zout = 50 Ω
Suppliers with verified business licenses
Audited Supplier 
){kind=link}
){kind=link}